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| PD- 95208 IRF7807D1PBF FETKY MOSFET / SCHOTTKY DIODE * Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier * Lead-Free Description The FETKYTM family of Co-Pack HEXFET(R)MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent Thermal Resistance Parameter Maximum Junction-to-Ambient 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 Max. 50 C Units C/W W A A Units V A/S A/S A/S G 1 2 3 4 8 7 6 K/D K/D K/D K/D 5 SO-8 Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25m 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RJA www.irf.com 1 5/5/04 IRF7807D1PBF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance V(BR)DSS RDS(on) 1.0 90 7.2 +/- 100 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 5.2 18.4 VDS = 16V, VGS = 0 nC 14 17 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C VGS = +/-12V VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A 17 25 m V A mA nA Gate Threshold Voltage* VGS(th) IDSS IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd QSW Qoss Rg Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time * Min VSD trr Qrr ton Typ Max 0.5 0.39 51 48 Units Conditions V Tj = 25C, Is = 1A, VGS =0V Tj = 125C, Is = 1A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D1PBF 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current ( A ) ID, Drain-to-Source Current (A) 10 2.5V 10 2.5V 380s PULSE WIDTH Tj = 25C 1 0.1 1 10 380s PULSE WIDTH Tj = 150C 1 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 70 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 60 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 50 50 40 30 20 10 0 40 30 20 0.0V 10 380s PULSE WIDTH Tj = 25C 0 0.2 0.4 0.6 0.8 1 380S PULSE WIDTH 0.0V Tj = 150C 0 0.2 0.4 0.6 0.8 1 0 VSD, Source-to-Drain Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics www.irf.com 3 IRF7807D1PBF 2000 1600 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6.0 ID= 7.0A VDS = 16V C, Capacitance (pF) 4.0 1200 Ciss Coss 800 2.0 400 0 Crss 1 10 100 0.0 0 2 4 6 8 10 12 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2.0 RDS(on) , Drain-to-Source On Resistance ID = 7.0A VGS = 4.5V 100 ID, Drain-to-Source Current (A) T J = 25C T J = 150C 1.5 (Normalized) 10 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J , Junction Temperature ( C ) VGS, Gate-to-Source Voltage (V) Fig 7. Normalized On-Resistance Vs. Temperature Fig 8. Typical Transfer Characteristics 4 www.irf.com IRF7807D1PBF RDS(on) , Drain-to -Source On Resistance ( ) R DS (on), Drain-to-Source On Resistance ) ( 0.05 0.024 0.04 0.022 VGS = 4.5V 0.020 0.03 0.02 ID = 7.0A 0.018 VGS = 10V 0.01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate -to -Source Voltage (V) I D , Drain Current (A) Fig 9. On-Resistance Vs. Gate Voltage Fig 10. On-Resistance Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 0.1 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET(R) MOSFET) www.irf.com 5 IRF7807D1PBF MOSFET , Body Diode & Schottky Diode Characteristics 100 100 10 Reverse Current - I R ( mA ) Tj = 150C 1 125C 100C Tj = 125C Tj = 25C 0.1 75C 50C 25C Instantaneous Forward Current - I F ( A ) 10 0.01 0.001 0.0001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D1PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING TO A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOS FET) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNATIONAL RECTIFIER LOGO XXXX F7101 www.irf.com 7 IRF7807D1PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 8 www.irf.com |
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